On March 31, 2025, global semiconductor giant STMicroelectronics and Innoscience, a global leader in 8-inch high-performance, low-cost silicon-based gallium nitride (GaN-on-Si) manufacturing, announced the signing of a gallium nitride technology development and manufacturing agreement. Based on this agreement, both will fully exploit their respective advantages to enhance the performance of gallium nitride power solutions and supply chain resilience.
With the surge in demand for efficient power solutions in consumer electronics, automobiles, and industrial fields, GaN technology has become the core breakthrough for the next generation of power semiconductors with its high frequency, high efficiency, and high-temperature resistance. How will this cooperation reshape the global electronic components supply chain? How will it accelerate the commercialization of GaN technology?
Source from STMicroelectronics
GaN vs. Traditional Silicon-Based Materials: Comprehensive Performance Surpassing
As a representative of third-generation semiconductor materials, GaN is significantly superior to traditional silicon-based devices in terms of power density, switching speed, and energy loss. For example, the operating frequency of GaN devices can reach more than 10 times that of silicon-based devices, while reducing energy loss by more than 50%. This feature shows great potential in fast-charging adapters, data center power supplies, and electric vehicle high-voltage systems.
In addition, GaN power devices have been rapidly applied to consumer electronics, data centers, industrial power supplies, and photovoltaic inverters, and are being actively introduced into the design of next-generation electric vehicle power systems due to their significant advantages in reducing size and weight.
ST and Innoscience Jointly Develop GaN Technology
The two parties reached a consensus on jointly developing gallium nitride power technology and building the future of power electronics technology for AI data centers, renewable energy generation and storage, and automobiles. The agreement stipulates that Innoscience can use ST's front-end manufacturing capacity outside of China to produce its gallium nitride wafers. ST can also use Innoscience's front-end manufacturing capacity in China to produce its gallium nitride wafers. Both parties are committed to expanding their gallium nitride product portfolios and market supply capabilities, and by enhancing the flexibility and resilience of the supply chain layout, meet the needs of all customers for diversified applications.
STMicroelectronics' automotive-grade certification capabilities complement Innoscience's 8-inch GaN-on-Si low-cost manufacturing technology to accelerate product commercialization. Through capacity linkage and localized capacity layout, the two parties can mitigate the risk of supply chain disruptions caused by geopolitics, epidemics, or natural disasters.
Marco Cassis, President of STMicroelectronics' Analog, Power and Discrete Devices, MEMS and Sensor Products Division, said: "STMicroelectronics and Innoscience are both vertically integrated device manufacturers (IDMs). This cooperation will maximize the advantages of this model and benefit global customers. On the one hand, STMicroelectronics will accelerate the gallium nitride power technology roadmap to supplement the existing silicon and silicon carbide product supply system; on the other hand, STMicroelectronics will also serve global customers through a flexible manufacturing model."
Dr. Weiwei Luo, Chairman and Founder of Innoscience, said: "GaN technology is essential to achieving more miniaturized, efficient, low-power, low-cost and low-CO2 electronic systems. Innoscience was the first to achieve mass production of 8-inch GaN-on-silicon wafers and has shipped more than 1 billion GaN devices covering multiple market segments. We are very excited about the strategic cooperation with STMicroelectronics. This strategic cooperation with STMicroelectronics will further expand and accelerate the popularization of GaN technology. The teams of both parties will work together to develop the next generation of GaN technology."
Challenges And Strategic Opportunities For The Popularization of GaN
Although mass production of 8-inch GaN wafers has started, the cost is still higher than that of silicon-based devices. Automotive-grade GaN needs to pass life tests of tens of thousands of hours, which requires higher stability.
Through joint development, ST can share R&D costs and shorten the product launch cycle. Innoscience can open up overseas markets with the help of ST's global channels. Industry analysts predict that GaN is expected to replace silicon-based IGBT in the medium and high-voltage power supply market and become a mainstream technology.
Conclusion
The cooperation between STMicroelectronics and Innoscience provides an innovative paradigm of "Technology Sharing + Production Capacity Collaboration" for the electronic components industry. In the critical window period when GaN technology is moving towards mainstream application, such cooperation will accelerate the industry's transformation towards high efficiency and low carbon.