• Intersil (Renesas Electronics Corporation)
• NP80N04NDG-S18-AY
• Single FETs, MOSFETs
• MOSFET N-CH 40V 80A TO262
•  NP80N04NDG-S18-AY Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIntersil (Renesas Electronics Corporation)
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity151
• DescriptionN-Channel 40 V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-262
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C80A (Tc)
• Rds On (Max) @ Id, Vgs4.8mOhm @ 40A, 10V
• Power Dissipation (Max)1.8W (Ta), 115W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 250μA
• Supplier Device PackageTO-262
• Drain to Source Voltage (Vdss)40 V
• Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V

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