• Intersil (Renesas Electronics Corporation)
• NP82N04MDG-S18-AY
• Single FETs, MOSFETs
• MOSFET N-CH 40V 82A TO220-3
•  NP82N04MDG-S18-AY Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIntersil (Renesas Electronics Corporation)
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity128
• DescriptionN-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature175°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C82A (Tc)
• Rds On (Max) @ Id, Vgs4.2mOhm @ 41A, 10V
• Power Dissipation (Max)1.8W (Ta), 143W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 250μA
• Supplier Device PackageTO-220-3
• GradeAutomotive
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)40 V
• Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 25 V
• QualificationAEC-Q101

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