• IR (Infineon Technologies)
• IMBG65R050M2HXTMA1
• Single FETs, MOSFETs
• SILICON CARBIDE MOSFET
•  IMBG65R050M2HXTMA1 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategorySingle FETs, MOSFETs
• PackagesTape & Reel (TR)
• Standard Quantity1000
• DescriptionN-Channel 650 V 41A (Tc) 172W (Tc) Surface Mount PG-TO263-7-12
• Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C41A (Tc)
• Rds On (Max) @ Id, Vgs62mOhm @ 18.2A, 18V
• Power Dissipation (Max)172W (Tc)
• Vgs(th) (Max) @ Id5.6V @ 3.7mA
• Supplier Device PackagePG-TO263-7-12
• Drive Voltage (Max Rds On, Min Rds On)15V, 20V
• Vgs (Max)+23V, -7V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs22 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds790 pF @ 400 V

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• QUOTE
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• QC PROCESS
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