• IR (Infineon Technologies)
• IMZ120R090M1HXKSA1
• Discrete Semiconductor Products
• SICFET N-CH 1.2KV 26A TO247-4
•  IMZ120R090M1HXKSA1 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1
• Package / CaseTO-247-4
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C26A (Tc)
• Rds On (Max) @ Id, Vgs117mOhm @ 8.5A, 18V
• Power Dissipation (Max)115W (Tc)
• Vgs(th) (Max) @ Id5.7V @ 3.7mA
• Supplier Device PackagePG-TO247-4-1
• Drive Voltage (Max Rds On, Min Rds On)15V, 18V
• Vgs (Max)+23V, -7V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs21 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds707 pF @ 800 V

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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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