• NXP Semiconductors
• PMCM6501VPEZ
• Single FETs, MOSFETs
• SMALL SIGNAL FIELD-EFFECT TRANSI
•  PMCM6501VPEZ Datasheet
• 

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• AttributesAttribute Value
• ManufacturerNXP Semiconductors
• CategorySingle FETs, MOSFETs
• PackagesBulk
• Standard Quantity1528
• DescriptionP-Channel 12 V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)
• Package / Case6-XFBGA, WLCSP
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
• Rds On (Max) @ Id, Vgs25mOhm @ 3A, 4.5V
• Power Dissipation (Max)556mW (Ta), 12.5W (Tc)
• Vgs(th) (Max) @ Id900mV @ 250μA
• Supplier Device Package6-WLCSP (1.48x0.98)
• Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
• Vgs (Max)±8V
• Drain to Source Voltage (Vdss)12 V
• Gate Charge (Qg) (Max) @ Vgs29.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 6 V

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