• ROHM Semiconductor
• RQ6E050AJTCR
• Single FETs, MOSFETs
• MOSFET N-CH 30V 5A TSMT6
•  RQ6E050AJTCR Datasheet
• 

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• AttributesAttribute Value
• ManufacturerROHM Semiconductor
• CategorySingle FETs, MOSFETs
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 30 V 5A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
• Package / CaseSOT-23-6 Thin, TSOT-23-6
• Mounting TypeSurface Mount
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C5A (Ta)
• Rds On (Max) @ Id, Vgs35mOhm @ 5A, 4.5V
• Power Dissipation (Max)950mW (Ta)
• Vgs(th) (Max) @ Id1.5V @ 1mA
• Supplier Device PackageTSMT6 (SC-95)
• Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
• Vgs (Max)±12V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds520 pF @ 15 V

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