• Sanyo Semiconductor/onsemi
• NTD3813N-1G
• Single FETs, MOSFETs
• MOSFET N-CH 16V 9.6A/51A IPAK
•  NTD3813N-1G Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSanyo Semiconductor/onsemi
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity75
• DescriptionN-Channel 16 V 9.6A (Ta), 51A (Tc) 1.2W (Ta), 34.9W (Tc) Through Hole IPAK
• Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 51A (Tc)
• Rds On (Max) @ Id, Vgs8.75mOhm @ 15A, 10V
• Power Dissipation (Max)1.2W (Ta), 34.9W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 250μA
• Supplier Device PackageIPAK
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±16V
• Drain to Source Voltage (Vdss)16 V
• Gate Charge (Qg) (Max) @ Vgs12.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds963 pF @ 12 V

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