• STMicroelectronics
• STB6N65M2
• Single FETs, MOSFETs
• MOSFET N-CH 650V 4A D2PAK
•  STB6N65M2 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategorySingle FETs, MOSFETs
• PackagesCut Tape (CT)
• Standard Quantity1000
• DescriptionN-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C4A (Tc)
• Rds On (Max) @ Id, Vgs1.35Ohm @ 2A, 10V
• Power Dissipation (Max)60W (Tc)
• Vgs(th) (Max) @ Id4V @ 250μA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±25V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs9.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds226 pF @ 100 V

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• RFQ
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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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