• STMicroelectronics
• STI22NM60N
• Single FETs, MOSFETs
• MOSFET N-CH 600V 16A I2PAK
•  STI22NM60N Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 16A (Tc) 125W (Tc) Through Hole I2PAK
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C16A (Tc)
• Rds On (Max) @ Id, Vgs220mOhm @ 8A, 10V
• Power Dissipation (Max)125W (Tc)
• Vgs(th) (Max) @ Id4V @ 250μA
• Supplier Device PackageI2PAK
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 50 V

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