• STMicroelectronics
• STQ1NK60ZR-AP
• Single FETs, MOSFETs
• MOSFET N-CH 600V 300MA TO92-3
•  STQ1NK60ZR-AP Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategorySingle FETs, MOSFETs
• PackagesTape & Box (TB)
• Standard Quantity2000
• DescriptionN-Channel 600 V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
• Package / CaseTO-226-3, TO-92-3 (TO-226AA)
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C300mA (Tc)
• Rds On (Max) @ Id, Vgs15Ohm @ 400mA, 10V
• Power Dissipation (Max)3W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 50μA
• Supplier Device PackageTO-92-3
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs6.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds94 pF @ 25 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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