• Toshiba Electronic Devices and Storage Corporation
• TK650A60F,S4X
• Discrete Semiconductor Products
• MOSFET N-CH 600V 11A TO220SIS
•  TK650A60F,S4X Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature150°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C11A (Ta)
• Rds On (Max) @ Id, Vgs650mOhm @ 5.5A, 10V
• Power Dissipation (Max)45W (Tc)
• Vgs(th) (Max) @ Id4V @ 1.16mA
• Supplier Device PackageTO-220SIS
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1320 pF @ 300 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT