• TSC (Taiwan Semiconductor)
• TSM60NC165CI C0G
• Single FETs, MOSFETs
• 600V, 24A, SINGLE N-CHANNEL POWE
•  TSM60NC165CI C0G Datasheet
• 

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• AttributesAttribute Value
• ManufacturerTSC (Taiwan Semiconductor)
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity2000
• DescriptionN-Channel 600 V 24A (Tc) 89W (Tc) Through Hole ITO-220
• Package / CaseTO-220-3 Full Pack, Isolated Tab
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C24A (Tc)
• Rds On (Max) @ Id, Vgs165mOhm @ 11.3A, 10V
• Power Dissipation (Max)89W (Tc)
• Vgs(th) (Max) @ Id5V @ 1mA
• Supplier Device PackageITO-220
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1857 pF @ 300 V

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