• Vishay / Siliconix
• SI8816EDB-T2-E1
• Single FETs, MOSFETs
• MOSFET N-CH 30V 4MICROFOOT
•  SI8816EDB-T2-E1 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategorySingle FETs, MOSFETs
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
• Package / Case4-XFBGA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
• Rds On (Max) @ Id, Vgs109mOhm @ 1A, 10V
• Power Dissipation (Max)500mW (Ta)
• Vgs(th) (Max) @ Id1.4V @ 250μA
• Supplier Device Package4-Microfoot
• Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
• Vgs (Max)±12V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds195 pF @ 15 V

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• QC PROCESS
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