• Vishay / Siliconix
• SISS23DN-T1-GE3
• Single FETs, MOSFETs
• MOSFET P-CH 20V 50A PPAK 1212-8S
•  SISS23DN-T1-GE3 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategorySingle FETs, MOSFETs
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionP-Channel 20 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
• Package / CasePowerPAK? 1212-8S
• Mounting TypeSurface Mount
• Operating Temperature-50°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C50A (Tc)
• Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 4.5V
• Power Dissipation (Max)4.8W (Ta), 57W (Tc)
• Vgs(th) (Max) @ Id900mV @ 250μA
• Supplier Device PackagePowerPAK? 1212-8S
• Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
• Vgs (Max)±8V
• Drain to Source Voltage (Vdss)20 V
• Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds8840 pF @ 15 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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