• Vishay / Siliconix
• SI2316BDS-T1-BE3
• Discrete Semiconductor Products
• N-CHANNEL 30-V (D-S) MOSFET
•  SI2316BDS-T1-BE3 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 30 V 3.9A (Ta), 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
• Package / CaseTO-236-3, SC-59, SOT-23-3
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C3.9A (Ta), 4.5A (Tc)
• Rds On (Max) @ Id, Vgs50mOhm @ 3.9A, 10V
• Power Dissipation (Max)1.25W (Ta), 1.66W (Tc)
• Vgs(th) (Max) @ Id3V @ 250µA
• Supplier Device PackageSOT-23-3 (TO-236)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds350 pF @ 15 V

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• QUOTE
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• QC PROCESS
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