• Vishay / Siliconix
• SIHFU310-GE3
• Discrete Semiconductor Products
• MOSFET N-CHANNEL 400V
•  SIHFU310-GE3 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity75
• DescriptionN-Channel 400 V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
• Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
• Rds On (Max) @ Id, Vgs3.6Ohm @ 1A, 10V
• Power Dissipation (Max)2.5W (Ta), 25W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-251AA
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)400 V
• Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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