• Vishay / Siliconix
• SIHU2N80E-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 800V 2.8A IPAK
•  SIHU2N80E-GE3 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity3000
• DescriptionN-Channel 800 V 2.8A (Tc) 62.5W (Tc) Through Hole TO-251AA
• Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
• Rds On (Max) @ Id, Vgs2.75Ohm @ 1A, 10V
• Power Dissipation (Max)62.5W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-251AA
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)800 V
• Gate Charge (Qg) (Max) @ Vgs19.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds315 pF @ 100 V

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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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